rf 0 1003 , rev . c ( 7/ 30 /13 ) ?201 3 microsemi corporation page 1 of 8 m sm l g5.0 a C m sm lg170ca e3 , msm lj5.0 C msm lj170ca e3 available s urface mount 30 00 watt transient voltage suppressor screening in reference to mil - prf - 19500 available description the m sm l g(j) 5.0 a through mxl sm l g(j) 170a series of high - reliability transient voltage suppressors (tvss) protect circuits from voltage spikes containing up to 3000 w (10/1000 s model pulse. the sm lg g ull - wing design in the do - 215ab package allows for visible solder connections. th e sm lj j- bend design i n the do - 214ab package allows for greater pc board mounting density. selections include unidirectional and bidirectional as well as rohs c ompliant versions . these are available with a variety of upscreening options for enhanced reliability. they protect against the secondary effects of lightning per iec61000 -4- 5 and against voltage pulses from inductive switching environments and induced by rf radiation. since their response time is virtually instantaneous, they can also be used in protection from esd and eft per i ec61000 -4- 2 and iec61000 -4- 4. do - 215a b package do - 21 4ab package important: for the latest information, visit our website http://www.microsemi.com . features ? high reliability devices with fabrication and assembly lot traceability for all m prefix devices ? all devices are 100 % surge tested ? 3 lot norm screening performed on s tandby c urrent (i d ) for all m prefix devices ? available in both unidirectional and bidirectional versions ? moisture classification is level 1 with no dry pack req uired per ipc/jedec j - std - 020b for all m prefix devices . ? e nhanced reliability s creening options with m prefix are available in reference to mil - prf - 19500 . refer to high reliability up - screened plastic products portfolio for more details on the screening options. (see part nomenclature for all available options.) ? rohs compliant versions available ? axial - lead equivalent packages for thru - hole mount ing are available as m5kp5.0 a to m5kp110 ca with 5000 w rating (contact microsemi for other surface mount options). applications / benefits ? suppresses transients up to 3000 watts (10/1000 us test pulse - see fi gure 2 ) ? selections for 5.0 to 170 volts standoff voltages (v wm ) ? protection from switching transients and induced rf ? protection from esd, and eft per iec 61000 -4- 2 and iec 61000 -4-4 ? secondary lightning protection per iec61000 -4- 5 with 42 o hms source impeda nce: class 1 & 2: sm l 5.0 a to sm l 170a or ca class 3 : sm l 5.0 a to sm l 150a or ca class 4 : sm l 5.0 a to sm l 75a or ca ? secondary lightning protection per iec61000 -4- 5 with 12 o hms source impedance: class 1 : sm l 5.0 a to sm l 17 0a or ca class 2: sm l 5.0 a to sm l 90 a or ca class 3: sml 5.0 a to sm l 48 a or ca class 4: sm l 5.0 a to sm l 24 a or ca ? secondary lightning protection per iec61000 -4- 5 with 2 o hms source impedance: class 2: sm l 5.0 a to sm l 43 a or ca class 3: sm l 5.0 a to sm l 22 a or ca class 4: sml 5.0a to sml10a or ca msc C lawrence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 080 3 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com downloaded from: http:///
rf 0 1003 , rev . c ( 7/ 30 /13 ) ?201 3 microsemi corporation page 2 of 8 m sm l g5.0 a C m sm lg170ca e3 , msm lj5.0 C msm lj170ca e3 maximum ratings parameters/test conditions symbol value unit junction and storage temperature t j and t stg - 65 to +150 oc thermal resistance junction - to - lead r ? jl 17.5 oc /w thermal resistance junc tion - to - ambient (1) r ? ja 77.5 oc /w peak pulse power d issipation @ 25 oc (at 10/1000 s, see figures 1, 2, and 3 ) p pp 3000 w impulse repetition rate (duty factor) df 0.01 or less % t clamping (0 volts to v (br) min.) unidirec tional bidirectional t clamping <100 <5 ps ns rated average power dissipation t l = + 45 oc t a = +25 oc p m(av) 6 1.61 (1) w maximum for w ard surge current (2) i fs m 200 a (pk) solder temperature @ 10 s t sp 260 o c notes : 1. w hen mounted on fr4 pc board (1oz cu) with recommended footprint (see last page ) 2. peak impulse of 8.3 ms half - sine wave at 25 oc (unidirectional only) mechanical and packaging ? case: void- free transfer molded thermosetting epoxy body meeting ul94v -0 ? terminals: t in - lead or rohs co mpliant annealed matte - tin plating . s olderable to mil - std - 750, method 2026. ? marking: part number marked on package ? polarity: cathode indicated by band. no cathode band on bi - directional devices ? tape & reel option: standar d per eia - 481 -b with 1 6 mm tape (add tr suffix to part number) . consult factory for quantities. ? weight: approximately 0.25 grams ? see p ackage d imensions on last page. part nomenclature mx sm l g 5.0 c a e3 reliability level * m (controlled product) ma (avionics grade) mx (reference jantx) mxl (mx lite) blank = commercial * (see high reliability up - screened plastic products portfolio ) surface mount package 3000 w power level gull - wing lead frame g = gull - wing j = j - bend rohs compliance e3 = rohs compliant blank = non - rohs compliant +/ - 5% tolerance level uni/bidirectional c = bidirectional blank = unidirectional reverse stand - off voltage (see electrical characteristics table) downloaded from: http:///
rf 0 1003 , rev . c ( 7/ 30 /13 ) ?201 3 microsemi corporation page 3 of 8 m sm l g5.0 a C m sm lg170ca e3 , msm lj5.0 C msm lj170ca e3 symbols & definitions symbol definition i (br) breakdown curren t : the current used for measuring b reakdown v oltage v (br) . i d standby current: the current at the rated standoff voltage (v wm ). i f forward current : the forward current dc value, no alternating component. i o average rectified output current: the o utp ut c urrent averaged over a full cycle with a 50 hz or 60 hz sine - wave input and a 180 degree conduction angle. i pp peak impulse current : the peak current during the impulse. p pp peak pulse power: the peak power dissipation resulting from the peak impulse current i pp . v c clamping voltage: maximum c lamping v oltage at specified i pp (peak pulse current) at the specified pulse conditions. v ( br ) minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current. v wm working peak voltage: the maximum peak voltage that can be applied over the operating temperature range. this i s also referred to as s tandoff v oltage. electrical characteristics @ 25 oc unless otherwise stated part number reverse stand - off voltage v wm vol ts breakdown voltage v (br) @ i (br) volts maximum clamping voltage @ i pp volts peak pulse current (see fig. 2 ) i pp amps maximum standby current @ v wm i d a gull - wing j- bend min. max. i (br) ma sml g5.0a sml g6.0a sm lj 5.0a sml j 6.0a 5.0 6.0 6.40 C 7.00 6.67 C 7.37 10 10 9.2 10.3 326.0 291.3 1000 1000 sml g6.5a sml g7.0a sml j 6.5a sml j 7.0a 6.5 7.0 7.22 C 7.98 7.78 C 8.60 10 10 11.2 12.0 267.9 250.0 500 200 sml g7.5a sml g8.0a sml j 7.5a sml j 8.0a 7.5 8.0 8.33 C 9.21 8.89 C 9. 83 1 1 12.9 13.6 232.6 220.6 100 50 sml g8.5a sml g9.0a sml j 8.5a sml j 9.0a 8.5 9.0 9.44 C 10.4 10.0 C 11.1 1 1 14.4 15.4 208.4 194.8 25 10 sml g10a sml g11a sml j 10a sml j 11a 10 11 11.1 C 12.3 12.2 C 13.5 1 1 17.0 18.2 176.4 164.8 5 5 sml g12a sml g13a sml j 12a s ml j 13a 12 13 13.3 C 14.7 14.4 C 15.9 1 1 19.9 21.5 150.6 139.4 5 5 sml g14a sml g15a sml j 14a sml j 15a 14 15 15.6 C 17.2 16.7 C 18.5 1 1 23.2 24.4 129.4 123.0 2 2 sml g16a sml g17a sml j 16a sml j 17a 16 17 17.8 C 19.7 18.9 C 20.9 1 1 26.0 27.6 115.4 106.6 2 2 sm l g18a sml g20a sml j 18a sml j 20a 18 20 20.0 C 22.1 22.2 C 24.5 1 1 29.2 32.4 102.8 92.6 2 2 sml g22a sml g24a sml j 22a sml j 24a 22 24 24.4 C 26.9 26.7 C 29.5 1 1 35.5 38.9 84.4 77.2 2 2 sml g26a sml g28a sml j 26a sml j 28a 26 28 28.9 C 31.9 31.1 C 34.4 1 1 42.1 45.4 71.2 66.0 2 2 sml g30a sml g33a sml j 30a s ml j 33a 30 33 33.3 C 36.8 36.7 C 40.6 1 1 48.4 53.3 62.0 56.2 2 2 sml g36a sml g40a sml j 36a sml j 40a 36 40 40.0 C 44.2 44.4 C 49.1 1 1 58.1 64.5 51.6 46.4 2 2 sml g43a sml g45a sml j 43a sml j 45a 43 45 47.8 C 52.8 50.0 C 5 5.3 1 1 69.4 72.7 43.2 41.2 2 2 sml g48a sml g51a sml j 48a sml j 51a 48 51 53.3 C 58.9 56.7 C 62.7 1 1 77.4 82.4 38.8 36.4 2 2 sml g54a sml g58a sml j 54a sml j 58a 54 58 60.0 C 66.3 64.4 C 71.2 1 1 87.1 93.6 34.4 32.0 2 2 sml g60a sml g64a sml j 60a sml j 64a 60 64 66.7 C 73.7 71.1 C 78.6 1 1 96.8 103.0 31.0 29.2 2 2 sml g70a sml g75a sml j 70a sml j 75a 70 75 77.8 C 86.0 83.3 C 92.1 1 1 113 121 26.6 24.8 2 2 continued. downloaded from: http:///
rf 0 1003 , rev . c ( 7/ 30 /13 ) ?201 3 microsemi corporation page 4 of 8 m sm l g5.0 a C m sm lg170ca e3 , msm lj5.0 C msm lj170ca e3 electrical characteristics @ 25 oc unless otherwise stated (continued) microsemi part number reverse stand - off voltage v wm volts breakdown voltage v (br) @ i (br) volts maximum clamping voltage @ i pp volts peak pulse current (see fig. 2 ) i pp amps maximum standby current @ v wm i d a gull - wing j- bend min. max. i (br) ma sml g78a sml g85a sml j 78a sml j 85a 78 85 86.7 C 95.8 94.4 C 104.0 1 1 126 137 22.8 20.8 2 2 sml g90a sml g100a sml j 90a sml j 100a 90 100 100 C 111 111 C 123 1 1 146 162 20.6 18.6 2 2 sml g110a sml g120a sml j 110a sml j 120a 110 120 122 C 135 133 C 147 1 1 17 7 193 16.8 15.6 2 2 sml g130a sml g150a sml j 130a sml j 150a 130 150 144 C 159 167 C 185 1 1 209 243 14.4 12.4 2 2 sml g160a sml g170a sml j 160a sml j 170a 160 170 178 C 197 189 C 209 1 1 259 275 11.6 11.0 2 2 note 1: bidirectional capacitance is half that shown in figure 4 at zero volts. downloaded from: http:///
rf 0 1003 , rev . c ( 7/ 30 /13 ) ?201 3 microsemi corporation page 5 of 8 m sm l g5.0 a C m sm lg170ca e3 , msm lj5.0 C msm lj170ca e3 graphs tp C pulse time C sec figure 1 peak pulse power vs. pulse time t C time (msec) figure 2 p ulse waveform i pp C peak pulse current - % i pp test wave form parameters tr = 10 sec. tp = 1000 sec. p pp C peak pulse power - kw downloaded from: http:///
rf 0 1003 , rev . c ( 7/ 30 /13 ) ?201 3 microsemi corporation page 6 of 8 m sm l g5.0 a C m sm lg170ca e3 , msm lj5.0 C msm lj170ca e3 graphs (continued) t l lead temperature o c figure 3 derating curve b v C breakdown voltage (v) figure 4 typical capacitance vs. breakdown voltage (unidirectional configuration) note: bidirectional capacitance is half that shown at zero volts. peak pulse power (p pp ) or continuous power in perce nt of 25 o c rating c C capacitance (pf) downloaded from: http:///
rf 0 1003 , rev . c ( 7/ 30 /13 ) ?201 3 microsemi corporation page 7 of 8 m sm l g5.0 a C m sm lg170ca e3 , msm lj5.0 C msm lj170ca e3 package dimensions note s : dimension e exceeds the jedec outline as shown . typical standoff height: 0.004 C 0.008 (0.1 mm C 0.2 mm). note s : dimension e exceeds the jedec outline in height as shown . typical standoff height: 0.004 C 0.008 (0.1 mm C 0.2 mm). dimensions ltr inch millimeters min m ax min max a 0 .115 0. 121 2.92 3.07 b 0 .260 0 .280 6.60 7.11 c 0. 220 0 .245 5.59 6.22 e 0 .077 0 .1 10 1.95 2.80 f 0 .380 0 .400 9.65 10.16 k 0 .025 0 .0 40 0.635 1.016 dimensions ltr inch millimeters min max min max a 0 .115 0 .121 2.92 3.07 b 0 .260 0 .280 6.60 7.11 c 0 .220 0 .245 5.59 6.22 d 0 .305 0 .320 7.75 8.13 e 0 .077 0 .110 1.95 2.80 l 0 .030 0 .060 0 .760 1.52 sm lg (do - 21 5ab) sm lj (do - 21 4ab) downloaded from: http:///
rf 0 1003 , rev . c ( 7/ 30 /13 ) ?201 3 microsemi corporation page 8 of 8 m sm l g5.0 a C m sm lg170ca e3 , msm lj5.0 C msm lj170ca e3 pad layout sml g (do - 215ab) ltr inch millimeters a 0 .510 12.95 b 0 .110 2.79 c 0 .150 3.81 smlj (do - 214ab) ltr in ch millimeters a 0. 390 9.90 b 0 .110 2.79 c 0 .150 3.81 downloaded from: http:///
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